Application of electron holography to surface topography observationOSAKABE, N.Surface science. 1993, Vol 298, Num 2-3, pp 345-350, issn 0039-6028Conference Paper

Surface-structure analysis by forward scattering in photoelectron and Auger-electron diffraction and by backscattered primary electron diffractionKONO, S.Surface science. 1993, Vol 298, Num 2-3, pp 362-368, issn 0039-6028Conference Paper

Relation between surface step density and RHEED intensityKAWAMURA, T.Surface science. 1993, Vol 298, Num 2-3, pp 331-335, issn 0039-6028Conference Paper

LEED from epitaxial surfacesHENZLER, M.Surface science. 1993, Vol 298, Num 2-3, pp 369-377, issn 0039-6028Conference Paper

Electron holography and holographic diffraction for surface studiesCOWLEY, J. M.Surface science. 1993, Vol 298, Num 2-3, pp 336-344, issn 0039-6028Conference Paper

Dynamical theory of RHEED from stepped surfacesBEEBY, J. L.Surface science. 1993, Vol 298, Num 2-3, pp 307-315, issn 0039-6028Conference Paper

Surface atom dynamics in epitaxial growth studied by RHEED-TRAXSINO, S; YAMANAKA, T.Surface science. 1993, Vol 298, Num 2-3, pp 432-439, issn 0039-6028Conference Paper

Dynamical diffraction effect for RHEED intensity oscillations : phase shift of oscillations for glancing anglesHORIO, Y; ICHIMIYA, A.Surface science. 1993, Vol 298, Num 2-3, pp 261-272, issn 0039-6028Conference Paper

Step edge barriers versus step edge relaxation in GaAs:Sn molecular beam epitaxyDABIRAN, A. M; SEUTTER, S. M; STOYANOV, S et al.Surface science. 1999, Vol 438, Num 1-3, pp 131-141, issn 0039-6028Conference Paper

Nucleation, growth and magnetic properties of epitaxial FeAl films on AlAs/GaAsISHAUG, B. E; SEUTTER, S. M; DABIRAN, A. M et al.Surface science. 1997, Vol 380, Num 1, pp 75-82, issn 0039-6028Article

Quantitative analysis of streaks in reflection high-energy electron diffraction: GaAs and AlAs deposited on GaAs(001)LENT, C. S; COHEN, P. I.Physical review. B, Condensed matter. 1986, Vol 33, Num 12, pp 8329-8335, issn 0163-1829, 1Article

Wide-Gap Semiconducting Graphene from Nitrogen-Seeded SiCWANG, F; LIU, G; ROTHWELL, S et al.Nano letters (Print). 2013, Vol 13, Num 10, pp 4827-4832, issn 1530-6984, 6 p.Article

Multiple scattering analysis of reflection high-energy electron diffraction intensities from GaAs(110)TONG, S. Y; ZHAO, T. C; POON, H. C et al.Physics letters. A. 1988, Vol 128, Num 8, pp 447-450, issn 0375-9601Article

Mass-action control of AlGaAs and GaAs growth in molecular beam epitaxyVAN HOVE, J. M; COHEN, P. I.Applied physics letters. 1985, Vol 47, Num 7, pp 726-728, issn 0003-6951Article

Desorption of H from Si(111) by resonant excitation of the Si-H vibrational stretch modeZHIHENG LIU; FELDMAN, L. C; TOLK, N. H et al.Science (Washington, D.C.). 2006, Vol 312, Num 5776, pp 1024-1026, issn 0036-8075, 3 p.Article

Reflection high energy electron diffraction measurements of molecular beam epitaxially grown GaAs and InGaAs on GaAs(111)DABIRAN, A. M; COHEN, P. I; ANGELO, J. E et al.Thin solid films. 1993, Vol 231, Num 1-2, pp 1-7, issn 0040-6090Article

Enhanced surface cation mobility on Sn delta-doped (Ga,Al)AsPETRICH, G. S; DABIRAN, A. M; COHEN, P. I et al.Applied physics letters. 1992, Vol 61, Num 2, pp 162-164, issn 0003-6951Article

Exchange effects in molecular-beam-epitaxy grown iron filmsCHEN, Y; LOTTIS, D. K; DAN DAHLBERG, E et al.Journal of applied physics. 1991, Vol 69, Num 8, pp 4523-4525, issn 0021-8979, 3 p., p.2AConference Paper

Relaxation of strained InGaAs during molecular beam epitaxyWHALEY, G. J; COHEN, P. I.Applied physics letters. 1990, Vol 57, Num 2, pp 144-146, issn 0003-6951Article

Surface reconstructions and growth mode transitions of AlAs(100)DABIRAN, A. M; COHEN, P. I.Journal of crystal growth. 1995, Vol 150, Num 1-4, pp 23-27, issn 0022-0248, 1Conference Paper

Heteroepitaxial growth of AlAs using dimethylethylamine alane as an Al precursorCHEN, K. M; CASTRO, T; FRANCIOSI, A et al.Applied physics letters. 1992, Vol 60, Num 17, pp 2132-2134, issn 0003-6951Article

Growth and characterization of iron aluminide films on compound semiconductorsKELLER, R. R; WOWCHAK, A. M; ANGELO, J. E et al.Journal of electronic materials. 1991, Vol 20, Num 4, pp 319-324, issn 0361-5235Article

The effect of submonolayer Sn δ-doping layers on the growth of InGaAs and GaAsPETRICH, G. S; DABIRAN, A. M; MACDONALD, J. E et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1991, Vol 9, Num 4, pp 2150-2153, issn 0734-211XConference Paper

Multilayer step formation after As adsorption on Si(100): nucleation of GaAs on vicinal SiPUKITE, O. R; COHEN, P. I.Applied physics letters. 1987, Vol 50, Num 24, pp 1739-1741, issn 0003-6951Article

Sensitive reflection high-energy electron diffraction measurement of the local misorientation of vicinal GaAs surfacesPUKITE, P. R; VAN HOVE, J. M; COHEN, P. I et al.Applied physics letters. 1984, Vol 44, Num 4, pp 456-458, issn 0003-6951Article